5 search results - page 1 / 1 » Test Consideration for Nanometer-Scale CMOS Circuits |
DT
2006
13 years 4 months ago
2006
The ITRS (International Technology Roadmap for Semiconductors) predicts aggressive scaling down of device size, transistor threshold voltage and oxide thickness to meet growing de...
TVLSI
2008
13 years 4 months ago
2008
As CMOS technology scales deeper into the nanometer regime, factors such as leakage power and chip temperature emerge as critically important concerns for high-performance VLSI des...
ARVLSI
2001
IEEE
13 years 8 months ago
2001
IEEE
As the operating supply voltage for commercial CMOS devices falls below 2 V, research activities are underway to develop CMOS integrated circuits that can operate at supply voltag...
ITC
1989
IEEE
13 years 8 months ago
1989
IEEE
- The electrical effects of CMOS IC physical defects that caused stuck-openfaults are evaluated, including their voltage levels, quiescent power supply current (IDDQ), transient re...
EH
2004
IEEE
13 years 8 months ago
2004
IEEE
The work presented here tackles the problem of designing a unipolar 6-bit digital-to-analog converter (DAC) with a voltage mode output by hardware evolution. Thereby a Field Progr...