Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been st...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme oper...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...