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TCAD
2010
98views more  TCAD 2010»
12 years 11 months ago
Statistical Modeling With the PSP MOSFET Model
PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV s...
Xin Li, Colin C. McAndrew, Weimin Wu, Samir Chaudh...
TCAD
2010
106views more  TCAD 2010»
13 years 2 months ago
Modeling the Overshooting Effect for CMOS Inverter Delay Analysis in Nanometer Technologies
—With the scaling of complementary metal–oxide– semiconductor (CMOS) technology into the nanometer regime, the overshooting effect due to the input-to-output coupling capacit...
Zhangcai Huang, Atsushi Kurokawa, Masanori Hashimo...