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    2007
    IEEE
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    Fundamental Bounds on Power Reduction during Data-Retention in Standby SRAM
    13 years 10 months ago
    Fundamental Bounds on Power Reduction during Data-Retention in Standby SRAM
    Download  bwrc.eecs.berkeley.edu
    Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
    Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....
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