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ISQED
2005
IEEE
64views Hardware» more  ISQED 2005»
13 years 10 months ago
Design of High Performance Sense Amplifier Using Independent Gate Control in sub-50nm Double-Gate MOSFET
Double-Gate (DG) transistor has emerged as the most promising device for nano-scale circuit design. Independent control of front and back gate in DG devices can be effectively use...
Saibal Mukhopadhyay, Hamid Mahmoodi-Meimand, Kaush...