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    2008
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    Analysis of Block Oxide Height Variations for a 40nm Gate Length bFDSOI-FET
    13 years 5 months ago
    Analysis of Block Oxide Height Variations for a 40nm Gate Length bFDSOI-FET
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    In this paper, a novel device architecture called the fully depleted silicon-on-insulator field-effect transistor with block oxide (bFDSOI-FET) is proposed to investigate the influ...
    Jyi-Tsong Lin, Yi-Chuen Eng
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