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    VLSID
    2003
    IEEE
    144views VLSI» more  VLSID 2003»
    The Impact of Bit-Line Coupling and Ground Bounce on CMOS SRAM Performance
    14 years 5 months ago
    The Impact of Bit-Line Coupling and Ground Bounce on CMOS SRAM Performance
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    In this paper, we provide an analytical framework to study the inter-cell and intra-cell bit-line coupling when it is superimposed with the ground bounce effect and show how those...
    Li Ding 0002, Pinaki Mazumder
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