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GLVLSI
2010
IEEE
154views VLSI» more  GLVLSI 2010»
13 years 10 months ago
Read-out schemes for a CNTFET-based crossbar memory
This paper investigates read-out schemes for a crossbar memory using CNTFET-based elements as cross-points. Two read-out schemes are presented in this paper; the first scheme bias...
Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi