ISCAS
2007
IEEE
13 years 10 months ago
2007
IEEE
Abstract—In the nanometer-scale CMOS technology, the gateoxide thickness has been scaled down to support a higher operating speed under a lower power supply (1xVDD). However, the...
ISCAS
2008
IEEE
13 years 11 months ago
2008
IEEE
—A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gateoxide reliability issue is proposed, which is one of the key mixedvoltage ...