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ISCAS
2006
IEEE
85views Hardware» more  ISCAS 2006»
13 years 9 months ago
Effective tunneling capacitance: a new metric to quantify transient gate leakage current
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
Elias Kougianos, Saraju P. Mohanty
VLSID
2007
IEEE
85views VLSI» more  VLSID 2007»
14 years 4 months ago
Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
Elias Kougianos, Saraju P. Mohanty