TCAD
2010
12 years 11 months ago
2010
Abstract--In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two features must be assigned opposite colors (corresponding to different ex...
ICCAD
2010
IEEE
13 years 2 months ago
2010
IEEE
In Double Patterning Lithography (DPL), conflict and stitch minimization are two main challenges. Post-routing mask decomposition algorithms [1
SLIP
2009
ACM
13 years 11 months ago
2009
ACM
Double patterning lithography seems to be a prominent choice for 32nm and 22nm technologies. Double patterning lithography techniques require additional masks for a single interco...
DAC
2009
ACM
14 years 5 months ago
2009
ACM
In double patterning lithography (DPL), coloring conflict and stitch minimization are the two main challenges. Post layout decomposition algorithm [1] [2]may not be enough to achi...