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ISCAS
2006
IEEE
85views Hardware» more  ISCAS 2006»
10 years 3 months ago
Effective tunneling capacitance: a new metric to quantify transient gate leakage current
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
Elias Kougianos, Saraju P. Mohanty
ICCD
2006
IEEE
123views Hardware» more  ICCD 2006»
10 years 6 months ago
Steady and Transient State Analysis of Gate Leakage Current in Nanoscale CMOS Logic Gates
Abstract— Gate leakage (direct tunneling current for sub65nm CMOS) can severely affect both the transient and steady state behaviors of CMOS circuits. In this paper we quantify t...
Saraju P. Mohanty, Elias Kougianos
VLSID
2007
IEEE
85views VLSI» more  VLSID 2007»
10 years 10 months ago
Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
Elias Kougianos, Saraju P. Mohanty
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