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ISLPED
2005
ACM
119views Hardware» more  ISLPED 2005»
13 years 10 months ago
FinFET-based SRAM design
Intrinsic variations and challenging leakage control in today’s bulk-Si MOSFETs limit the scaling of SRAM. Design tradeoffs in six-transistor (6-T) and four-transistor (4-T) SRA...
Zheng Guo, Sriram Balasubramanian, Radu Zlatanovic...