SBCCI
2009
ACM
13 years 9 months ago
2009
ACM
Because of the aggressive scaling of integrated circuits and the given limits of atomic scales, circuit designers have to become more and more aware of the arising reliability and...
DATE
2010
IEEE
13 years 9 months ago
2010
IEEE
With aggressive gate oxide scaling, latent defects in the gate oxide manifest as traps that, in time, lead to gate oxide breakdown. Progressive gate oxide breakdown, also referred...
SBCCI
2005
ACM
13 years 10 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
ISCAS
2006
IEEE
13 years 10 months ago
2006
IEEE
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
DATE
2006
IEEE
13 years 10 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
MICRO
2007
IEEE
13 years 10 months ago
2007
IEEE
Technology scaling, characterized by decreasing feature size, thinning gate oxide, and non-ideal voltage scaling, will become a major hindrance to microprocessor reliability in fu...