GLVLSI
2010
IEEE
13 years 4 months ago
2010
IEEE
Relentless CMOS scaling coupled with lower design tolerances is making ICs increasingly susceptible to wear-out related permanent faults and transient faults, necessitating on-chi...
GLVLSI
2010
IEEE
13 years 4 months ago
2010
IEEE
We revisit voltage partitioning problem when the mapped voltages of functional units are predetermined. If energy consumption is estimated by formulation E = CV 2 , a published wo...
GLVLSI
2010
IEEE
13 years 4 months ago
2010
IEEE
The paper presents a novel high-level power modeling and estimation framework. The approach is based on a synergic integration of aspect-oriented programming(AOP) and SystemC. Mac...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
Loop caches provide an effective method for decreasing memory hierarchy energy consumption by storing frequently executed code in a more energy efficient structure than the level ...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
As the rated performance of microprocessors increases, voltage droop emergencies become a significant problem. In this paper, two new techniques to combat voltage droop emergencie...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
In this paper, we present an approved linear-time algorithm for statistical leakage analysis in the present of any spatial correlation condition (strong or weak). The new algorith...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
For timing-driven or yield-driven designs, non-tree routing has become more and more popular and additional loops provide the redundant paths to protect against the effect of the ...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment o...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
Transistor aging effects (NBTI and PBTI) impact the reliability of SRAM in nano-scale CMOS technologies. In this research, the combined effect of NBTI and PBTI on power gated SRAM...
GLVLSI
2010
IEEE
13 years 8 months ago
2010
IEEE
The electromagnetic interaction of on-chip antennas and metal interconnects modeled in a 250 nm complementary metal-oxide semiconductor (CMOS) technology is investigated. A finite...