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    VLSID
    2006
    IEEE
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    Evaluation of Non-Quasi-Static Effects during SEU in Deep-Submicron MOS Devices and Circuits
    13 years 11 months ago
    Evaluation of Non-Quasi-Static Effects during SEU in Deep-Submicron MOS Devices and Circuits
    Download  www.eng.auburn.edu
    In this paper, for the first time, we analyze non-quasistatic (NQS) effects during single-event upsets (SEUs) in deep-submicron (DSM) MOS devices, using extensive 2D device, BSIM...
    Palkesh Jain, D. Vinay Kumar, J. M. Vasi, Mahesh B...
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