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ISQED
2005
IEEE
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13 years 10 months ago
Analysis and Design of LVTSCR-based EOS/ESD Protection Circuits for Burn-in Environment
As technology feature size is reduced, ESD becomes one of the dominant failure modes due to the lower gate oxide breakdown voltage. Also, the holding voltage of LVTSCR devices is ...
Oleg Semenov, H. Sarbishaei, Manoj Sachdev