SOCC
2008
IEEE
13 years 11 months ago
2008
IEEE
In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be bia...
ICCAD
2006
IEEE
14 years 1 months ago
2006
IEEE
In this paper, for the first time, a theory for evaluating dynamic noise margins of SRAM cells is developed analytically. The results allow predicting the transient error suscepti...