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    2006
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    Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering
    13 years 5 months ago
    Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering
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    Surface relief formed by nanoimprinting and etching into a thermally grown SiO2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge....
    T. I. Kamins, A. A. Yasseri, S. Sharma, R. F. W. P...
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