DATE
2005
IEEE
13 years 10 months ago
2005
IEEE
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...
ICCAD
2006
IEEE
13 years 10 months ago
2006
IEEE
Traditionally, at early design stages, leakage power is associated with the number of transistors in a design. Hence, intuitively an implementation with minimum resource usage wou...
ISCAS
2007
IEEE
13 years 10 months ago
2007
IEEE
Abstract— This paper quantifies the impact of threshold voltage variation on aging-related hard failure rates in a highperformance 65nm processor. Simulations show that threshol...
ISQED
2009
IEEE
13 years 11 months ago
2009
IEEE
— This paper revisits and extends a general linear programming(LP) formulation to exploit multiple knobs such as multi-Lgate footprint-compatible libraries and post-layout Lgateb...
HPCA
2005
IEEE
14 years 4 months ago
2005
IEEE
If current technology scaling trends hold, leakage power dissipation will soon become the dominant source of power consumption in high performance processors. Caches, due to the f...