A Comparison of First and Second Generation Switched-Current Cells

The Switched-Current SI technique is a circuit method that enables analog sampled-data circuits to be realized with a standard digital CMOS process. At this time it is fair to say that SI circuits are realized from either rst- or second-generation type current memory cells, with the latter cell being favored owing to its perceived better sensitivity behavior. Unfortunately, however, the second-generation current memory cell has some serious circuit drawbacks. These include large internal transient glitches that cause large linear and nonlinear circuit errors, as well, requires a more complicated circuit. When all factors are considered including the sensitivity issue, it is our opinion that the rst-generation cell is superior to the secondgeneration memorycell. In this paper we shall present our arguments and experiments that back up these claims.

• Type: Conference
• Year: 1994
• Where: ISCAS
• Authors: Peter M. Sinn, Gordon W. Roberts
• Keywords: Current Memory Cell, Hardware, ISCAS 1994, Second-generation Current Memory, Switched-Current SI Technique