Variation aware performance analysis of gain cell embedded DRAMs

Gain cell embedded DRAMs are twice as dense as 6T SRAMs, are logic compatible, have decoupled read and write paths providing good low voltage margin, and can drive long bitlines with gain. In this work, we present a variation study of gain cell eDRAM

• Type: Conference
• Year: 2010
• Where: ISLPED
• Authors: Wei Zhang, Ki Chul Chun, Chris H. Kim
• Keywords: Gain Cell, Gain Cell EDRAM, Hardware, ISLPED 2010, Variation Study