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    Compensation and doping effects in heavily helium-radiated silicon for power device applications

    13 years 5 months ago
    Compensation and doping effects in heavily helium-radiated silicon for power device applications
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    The formation of defects modifying the effective doping concentration of helium-radiated pC
    Ralf Siemieniec, Hans-Joachim Schulze, F.-J. Niede
    claim paper
    Added 14 Dec 2010
    Updated 14 Dec 2010
    Type Journal
    Year 2006
    Where MJ
    Authors Ralf Siemieniec, Hans-Joachim Schulze, F.-J. Niedernostheide, W. Südkamp, Josef Lutz
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