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3DIC
2009
IEEE

Architectural evaluation of 3D stacked RRAM caches

12 years 6 months ago
Architectural evaluation of 3D stacked RRAM caches
The first memristor, originally theorized by Dr. Leon Chua in 1971, was identified by a team at HP Labs in 2008. This new fundamental circuit element is unique in that its resistance changes as current passes through it, giving the device a memory of the past system state. The immediately obvious application of such a device is in a non-volatile memory, wherein high- and low-resistance states are used to store binary values. A memory array of memristors forms what is called a resistive RAM or RRAM. In this paper, we survey the memristors that have been produced by a number of different research teams and present a point-by-point comparison between DRAM and this new RRAM, based on both existent and expected near-term memristor devices. In particular, we consider the case of a die-stacked 3D memory that is integrated onto a logic die and evaluate which memory is best suited for the job. While still suffering a few shortcomings, RRAM proves itself a very interesting design alternative ...
Dean L. Lewis, HsienHsin S. Lee
Added 18 May 2010
Updated 18 May 2010
Type Conference
Year 2009
Where 3DIC
Authors Dean L. Lewis, HsienHsin S. Lee
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