Capacitive coupling of data and power for 3D silicon-on-insulator VLSI

— We designed a 3D integrated multi-chip module that uses non-galvanic capacitive coupling to provide bi-directional communication and exchange power supply between two separate dies. A prototype was fabricated on a conventional 0.5µm Silicon-on-Sapphire (SOS) process. We demonstrated that bidirectional communication can be achieved between the two dies at 1Hz-15MHz (100MHz from simulations) while at the same time also transferring power to the receiver die. The nongalvanically connected prototype is an enabling technology for the simplification of 3D VLSI fabrication, wafer stacking and packaging.

• Type: Conference
• Year: 2005
• Where: ISCAS
• Authors: Eugenio Culurciello, Andreas G. Andreou
• Keywords: Exchange Power Supply, ISCAS 2005, Multi-chip Module, Non-galvanic Capacitive Coupling