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MICRO
2009
IEEE

Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling

10 years 8 months ago
Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling
Phase Change Memory (PCM) is an emerging memory technology that can increase main memory capacity in a cost-effective and power-efficient manner. However, PCM cells can endure only a maximum of 107 - 108 writes, making a PCM based system have a lifetime of only a few years under ideal conditions. Furthermore, we show that non-uniformity in writes to different cells reduces the achievable lifetime of PCM system by 20x. Writes to PCM cells can be made uniform with Wear-Leveling. Unfortunately, existing wear-leveling techniques require large storage tables and indirection, resulting in significant area and latency overheads. We propose Start-Gap, a simple, novel, and effective wear-leveling technique that uses only two registers. By combining Start-Gap with simple address-space randomization techniques we show that the achievable lifetime of the baseline 16GB PCM-based system is boosted from 5% (with no wear-leveling) to 97% of the theoretical maximum, while incurring a total storage o...
Moinuddin K. Qureshi, John Karidis, Michele France
Added 24 May 2010
Updated 24 May 2010
Type Conference
Year 2009
Where MICRO
Authors Moinuddin K. Qureshi, John Karidis, Michele Franceschini, Vijayalakshmi Srinivasan, Luis Lastras, Bülent Abali
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