High performance of short-channel MOSFETs due to an elevated central-channel doping

— An elevated central-channel doping with a depth similar to the S/D junctions is proposed as the best measure for simultaneously improving MOSFET device and high speed circuit performances as well as minimizing their fluctuations. We base our arguments on hydrodynamic device simulation, measured device data of vertical MOSFETs with a central delta-doped impurity profile and include experimental results on doping-profile fluctuations along the channel, which have not been available previously.

• Type: Conference
• Year: 2000
• Where: ASPDAC
• Authors: Masayasu Tanaka, N. Tokida, T. Okagaki, Michiko Miura-Mattausch, Walter Hansch, Hans Jürgen Mattausch
• Keywords: ASPDAC 2000, Hardware, Hydrodynamic Device Simulation, MOSFET Device, S/D Junctions