Phototransistor image sensor in silicon on sapphire

— We present a back-illuminated 32 x 32 pixel image sensor in 0.5-µm silicon-on-sapphire process. The imager performs ”snap-shot” image acquisition and analog readout at a continuous rate of thousands of frames/s and consumes as little as 250 µW. Each pixel consists of a phototransistor and a memory capacitor in 40 µm x 40 µm with a fill factor of 43%. The image sensor is suited for hyper-spectral imaging at high speeds.

• Type: Conference
• Year: 2008
• Where: ISCAS
• Authors: Joon Hyuk Park, Eugenio Culurciello
• Keywords: 0.5-µm Silicon-on-sapphire Process, Hardware, Image Acquisition, ISCAS 2008, Pixel Image Sensor