16 search results - page 4 / 4 » A low-leakage current power 180-nm CMOS SRAM |
ISQED
2006
IEEE
13 years 11 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...