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» A multi-level static memory cell
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ISCAS
2003
IEEE
97views Hardware» more  ISCAS 2003»
13 years 10 months ago
A multi-level static memory cell
This paper introduces a static multi-level memory cell that was conceived to store state variables in neuromorphic onchip learning applications. It consists of a capacitance that ...
Philipp Häfliger, Håvard Kolle Riis
CAL
2002
13 years 5 months ago
Implementing Decay Techniques using 4T Quasi-Static Memory Cells
Abstract-This paper proposes the use of four-transistor (4T) cache and branch predictor array cell designs to address increasing worries regarding leakage power dissipation. While ...
Philo Juang, Phil Diodato, Stefanos Kaxiras, Kevin...
VLSID
2006
IEEE
87views VLSI» more  VLSID 2006»
13 years 11 months ago
Evaluation of Non-Quasi-Static Effects during SEU in Deep-Submicron MOS Devices and Circuits
In this paper, for the first time, we analyze non-quasistatic (NQS) effects during single-event upsets (SEUs) in deep-submicron (DSM) MOS devices, using extensive 2D device, BSIM...
Palkesh Jain, D. Vinay Kumar, J. M. Vasi, Mahesh B...
ICCD
2001
IEEE
84views Hardware» more  ICCD 2001»
14 years 2 months ago
Static Energy Reduction Techniques for Microprocessor Caches
Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of increased static energy consumption ...
Heather Hanson, M. S. Hrishikesh, Vikas Agarwal, S...
VLSID
2009
IEEE
119views VLSI» more  VLSID 2009»
14 years 5 months ago
Single Ended Static Random Access Memory for Low-Vdd, High-Speed Embedded Systems
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
Jawar Singh, Jimson Mathew, Saraju P. Mohanty, Dhi...