2 search results - page 1 / 1 » Biasing techniques for subthreshold MOS resistive grids |
ISCAS
2005
IEEE
13 years 10 months ago
2005
IEEE
— A classic resistive network implemented using MOS transistors suffers from non-linearity in the subthreshold exponential parameter κ that arises due to varying VGB and VBS. We...
ISCAS
2002
IEEE
13 years 10 months ago
2002
IEEE
We present a CMOS circuit that utilizes the back-gate effect to extend the linear range of a subthreshold MOS transconductor. Previous designs of wide-linear-range transconductors...