3 search results - page 1 / 1 » Design of High Performance Sense Amplifier Using Independent... |
ISQED
2005
IEEE
13 years 10 months ago
2005
IEEE
Double-Gate (DG) transistor has emerged as the most promising device for nano-scale circuit design. Independent control of front and back gate in DG devices can be effectively use...
ICCAD
2005
IEEE
14 years 1 months ago
2005
IEEE
: Double-Gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG device...
DAC
2006
ACM
14 years 5 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...