Abstract—Recent breakthroughs in circuit and process technology have enabled new usage models for non-volatile memory technologies such as Flash and phase change RAM (PCRAM) in t...
Abstract. In this work, we develop novel file system, FRASH, for byteaddressable NVRAM (FRAM[1]) and NAND Flash device. Byte addressable NVRAM and NAND Flash is typified by the DRA...
Eun-ki Kim, Hyungjong Shin, Byung-gil Jeon, Seokhe...
NAND flash memory has become an indispensable component in mobile embedded systems because of its versatile features such as non-volatility, solid-state reliability, low cost and ...
Chanik Park, Jaeyu Seo, Sunghwan Bae, Hyojun Kim, ...
In this paper, we propose a hybrid-level flash translation layer (FTL) called RNFTL (Reuse-Aware NFTL) to improve the endurance and space utilization of NAND flash memory. Our bas...
Yi Wang, Duo Liu, Meng Wang, Zhiwei Qin, Zili Shao...
Even though its advantages such as non-volatility, fast write access time and solid-state shock resistance, NAND flash memory suffers from out-place-update, limited erase cycles, a...
Song-Hwa Park, Tae-Hoon Kim, Tae-Hoon Lee, Ki-Dong...