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    ISLPED
    2009
    ACM
    168views Hardware» more  ISLPED 2009»
    Low power circuit design based on heterojunction tunneling transistors (HETTs)
    14 years 5 days ago
    Low power circuit design based on heterojunction tunneling transistors (HETTs)
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    The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
    Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...
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