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VLSID
2007
IEEE
85views VLSI» more  VLSID 2007»
14 years 5 months ago
Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
Elias Kougianos, Saraju P. Mohanty
DATE
2010
IEEE
159views Hardware» more  DATE 2010»
13 years 10 months ago
A rapid prototyping system for error-resilient multi-processor systems-on-chip
—Static and dynamic variations, which have negative impact on the reliability of microelectronic systems, increase with smaller CMOS technology. Thus, further downscaling is only...
Matthias May, Norbert Wehn, Abdelmajid Bouajila, J...