24 search results - page 4 / 5 » Improving write operations in MLC phase change memory |
DEBU
2010
13 years 2 months ago
2010
A great deal of research has been done on solid-state storage media such as flash memory and non-volatile memory in the past few years. While NAND-type flash memory is now being c...
ISCA
2010
IEEE
13 years 8 months ago
2010
IEEE
As leakage and other charge storage limitations begin to impair the scalability of DRAM, non-volatile resistive memories are being developed as a potential replacement. Unfortunat...
DATE
2009
IEEE
13 years 11 months ago
2009
IEEE
NAND Flash Memories require Garbage Collection (GC) and Wear Leveling (WL) operations to be carried out by Flash Translation Layers (FTLs) that oversee flash management. Owing to ...
ISCA
2010
IEEE
13 years 10 months ago
2010
IEEE
Light-weight, flexible access control, which allows software to regulate reads and writes to any granularity of memory region, can help improve the reliability of today’s multi...
RTAS
2010
IEEE
13 years 2 months ago
2010
IEEE
Abstract--Dynamic RAM (DRAM) has been the best technology for main memory for over thirty years. In embedded space applications, radiation hardened DRAM is needed because gamma ray...