This paper presents an evaluation to determine the importance of the accurate thermal characterization for several elements of a semiconductor device. Specifically, it evaluates ...
In deep submicron VLSI circuits, interconnect reliability due to electromigration and thermal effects is fast becoming a serious design issue particularly for long signal lines. T...
The current paradigm of using Cu interconnects for on-chip global communication is rapidly becoming a serious performance bottleneck in ultra-deep submicron (UDSM) technologies. C...
The test signal method can be used to measure and model inductance parameters (self and mutual) of a very small interconnect especially in highdensity IC’s by using a test signa...