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DATE
2008
IEEE
13 years 6 months ago
2008
IEEE
Advanced MOSFETs such as Strained Silicon (SS) devices have emerged as critical enablers to keep Moore's law on track for sub100nm technologies. Use of Strained Silicon devic...
TCAD
2010
12 years 11 months ago
2010
Starting from the 90nm technology node, process induced stress has played a key role in the design of highperformance devices. The emergence of source/drain silicon germanium (S/D ...