13 search results - page 2 / 3 » Modeling QCA Defects at Molecular-level in Combinational Cir... |
DATE
2010
IEEE
13 years 10 months ago
2010
IEEE
With aggressive gate oxide scaling, latent defects in the gate oxide manifest as traps that, in time, lead to gate oxide breakdown. Progressive gate oxide breakdown, also referred...
DAC
2008
ACM
13 years 7 months ago
2008
ACM
Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics because of their excellent carrier transport properties and potential for large scale proc...
MTDT
2003
IEEE
13 years 10 months ago
2003
IEEE
ct Defect-based testing for digital logic concentrates primarily on methods of test application, including for example at-speed structural tests and IDDQ testing. In contrast, defe...
DDECS
2007
IEEE
13 years 11 months ago
2007
IEEE
- As shown by previous studies, shorts between the interconnect wires should be considered as the predominant cause of failures in CMOS circuits. Fault models and tools for targeti...
ISQED
2009
IEEE
14 years 7 days ago
2009
IEEE
Abstract — Nanoelectronic design faces unprecedented reliability challenges and must achieve noise immunity and delay insensitiveness in the presence of prevalent defects and sig...