Sciweavers

35 search results - page 2 / 7
» New subthreshold concepts in 65nm CMOS technology
Sort
View
ISCAS
2007
IEEE
90views Hardware» more  ISCAS 2007»
13 years 11 months ago
Leakage-Aware Design of Nanometer SoC
– In the sub-65 nm CMOS technologies, subthreshold and gate dielectric leakage currents need to be simultaneously suppressed for effective energy reduction. New low-leakage circu...
Volkan Kursun, Sherif A. Tawfik, Zhiyu Liu
ICASSP
2011
IEEE
12 years 8 months ago
Energy-optimized high performance FFT processor
This paper proposes an ultra low energy FFT processor suitable for sensor applications. The processor is based on R4MDC but achieves full utilization of computational elements. It...
Dongsuk Jeon, Mingoo Seok, Chaitali Chakrabarti, D...
TVLSI
2008
197views more  TVLSI 2008»
13 years 4 months ago
Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
Behnam Amelifard, Farzan Fallah, Massoud Pedram
ICCAD
2006
IEEE
208views Hardware» more  ICCAD 2006»
14 years 1 months ago
Automation in mixed-signal design: challenges and solutions in the wake of the nano era
The use of CMOS nanometer technologies at 65 nm and below will pose serious challenges on the design of mixed-signal integrated systems in the very near future. Rising design comp...
Trent McConaghy, Georges G. E. Gielen
SOCC
2008
IEEE
169views Education» more  SOCC 2008»
13 years 11 months ago
A subthreshold single ended I/O SRAM cell design for nanometer CMOS technologies
— Lowering supply voltage is an effective technique for power reduction in memory design, however traditional memory cell design fails to operate, as shown in [3], [10], at ultra...
Jawar Singh, Jimson Mathew, Dhiraj K. Pradhan, Sar...