7 search results - page 1 / 2 » Reliability-aware design for nanometer-scale devices |
DT
2006
13 years 4 months ago
2006
The ITRS (International Technology Roadmap for Semiconductors) predicts aggressive scaling down of device size, transistor threshold voltage and oxide thickness to meet growing de...
ISMVL
2008
IEEE
13 years 11 months ago
2008
IEEE
Nanoscale multiple-valued logic systems require the development of nanometer scale integrated circuits and components. Due to limits in device physics, new components must be deve...
ISQED
2006
IEEE
13 years 10 months ago
2006
IEEE
— Negative Bias Temperature Instability (NBTI) has the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devices due to its deleterious ...
DATE
2002
IEEE
13 years 9 months ago
2002
IEEE
The relative tolerances for interconnect and device parameter variations have not scaled with feature sizes which have brought about significant performance variability. As we sca...
ASPDAC
2007
ACM
13 years 8 months ago
2007
ACM
In recent years, several alternative devices have been proposed to deal with inherent limitation of conventional CMOS devices in terms of scalability at nanometer scale geometry. ...