234 search results - page 3 / 47 » Scaling, Power and the Future of CMOS |
DT
2006
13 years 5 months ago
2006
The ITRS (International Technology Roadmap for Semiconductors) predicts aggressive scaling down of device size, transistor threshold voltage and oxide thickness to meet growing de...
ISCAS
2007
IEEE
14 years 19 hour ago
2007
IEEE
TheRFdesignparadigm will changesignificantly asCMOS technology scales and integration levels rise to accommodate multi-band, multi-mode transceivers and baseband processors. This...
VLSID
2006
IEEE
13 years 11 months ago
2006
IEEE
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
TVLSI
2002
13 years 5 months ago
2002
Simultaneous switching noise (SSN) has become an important issue in the design of the internal on-chip power distribution networks in current very large scale integration/ultra lar...
DATE
2010
IEEE
13 years 10 months ago
2010
IEEE
Abstract—Future microprocessors increasingly rely on an unreliable CMOS fabric due to aggressive scaling of voltage and frequency, and shrinking design margins. Fortunately, many...