65 search results - page 3 / 13 » Storage coding for wear leveling in flash memories |
SIGOPS
2010
13 years 3 months ago
2010
Reports of NAND flash device testing in the literature have for the most part been limited to examination of circuit-level parameters on raw flash chips or prototypes, and syste...
CORR
2010
Springer
13 years 7 days ago
2010
Springer
A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF(2...
EMSOFT
2006
Springer
13 years 9 months ago
2006
Springer
In NAND flash-based storage systems, an intermediate software layer called a flash translation layer (FTL) is usually employed to hide the erase-before-write characteristics of NA...
TIT
2010
12 years 12 months ago
2010
Abstract--Memories whose storage cells transit irreversibly between states have been common since the start of the data storage technology. In recent years, flash memories have bec...
CODES
2003
IEEE
13 years 10 months ago
2003
IEEE
NAND flash memory has become an indispensable component in mobile embedded systems because of its versatile features such as non-volatility, solid-state reliability, low cost and ...