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CORR
2010
Springer
107views Education» more  CORR 2010»
12 years 11 months ago
The E8 Lattice and Error Correction in Multi-Level Flash Memory
A construction using the E8 lattice and Reed-Solomon codes for error-correction in flash memory is given. Since E8 lattice decoding errors are bursty, a Reed-Solomon code over GF(2...
Brian M. Kurkoski
TVLSI
2010
12 years 11 months ago
Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding
By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density ad...
Shu Li, Tong Zhang