31 search results - page 5 / 7 » glvlsi 2010 |
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
We revisit voltage partitioning problem when the mapped voltages of functional units are predetermined. If energy consumption is estimated by formulation E = CV 2 , a published wo...
GLVLSI
2010
IEEE
13 years 10 months ago
2010
IEEE
Flash Memory is a desirable candidate for main memory replacement in embedded systems due to its low leakage power consumption, higher density and non-volatility characteristics. ...
GLVLSI
2010
IEEE
13 years 10 months ago
2010
IEEE
Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high Ion/Ioff, and potential for l...
GLVLSI
2010
IEEE
13 years 7 months ago
2010
IEEE
This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment o...
GLVLSI
2010
IEEE
13 years 7 months ago
2010
IEEE
As the rated performance of microprocessors increases, voltage droop emergencies become a significant problem. In this paper, two new techniques to combat voltage droop emergencie...