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ICCAD
2010
IEEE
13 years 3 months ago
2010
IEEE
Through-silicon via (TSV) fabrication causes tensile stress around TSVs which results in significant carrier mobility variation in the devices in their neighborhood. Keep-out zone ...
ICCAD
2010
IEEE
13 years 2 months ago
2010
IEEE
Coarse-grain multi-threshold CMOS (MTCMOS) is an effective power-gating technique to reduce IC's leakage power consumption by turning off idle devices with MTCMOS power switc...
ICCAD
2010
IEEE
13 years 2 months ago
2010
IEEE
Defect repair has become a necessary process to enhance the overall yield for memories since manufacturing a natural good memory is difficult in current memory technologies. This ...
ICCAD
2010
IEEE
13 years 3 months ago
2010
IEEE
Extreme technology scaling in silicon devices drastically affects reliability, particularly because of runtime failures induced by transistor wearout. Currently available online t...
ICCAD
2010
IEEE
13 years 3 months ago
2010
IEEE
Trace buffer technology allows tracking the values of a few number of state elements inside a chip within a desired time window, which is used to analyze logic errors during post-s...