33 search results - page 7 / 7 » tcad 2010 |
CORR
2010
Springer
13 years 4 months ago
2010
Springer
This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometric...
TCAD
2008
13 years 4 months ago
2008
At-speed functional testing, delay testing, and n-detection test sets are being used today to detect deep submicrometer defects. However, the resulting test data volumes are too hi...
GLVLSI
2010
IEEE
13 years 6 months ago
2010
IEEE
This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment o...