Sciweavers

ISCAS
2008
IEEE
162views Hardware» more  ISCAS 2008»
13 years 11 months ago
Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin
— This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell employs a pair of differential MT...
Wei Xu, Tong Zhang, Yiran Chen