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VLSID
2006
IEEE
169views VLSI» more  VLSID 2006»
13 years 10 months ago
A Low Leakage and SNM Free SRAM Cell Design in Deep Sub Micron CMOS Technology
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
Sanjeev K. Jain, Pankaj Agarwal