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    VLSID
    2007
    IEEE
    85views VLSI» more  VLSID 2007»
    Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
    14 years 5 months ago
    Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
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    In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
    Elias Kougianos, Saraju P. Mohanty
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